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Gallium arsenide substrate VGF-p type Zn+Si dopedHandling Company
DOWA Electronics Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Plane direction | Surface finish Back side | Surface finish surface | Dislocation density (EPD) (cm^-2) | Crystal growth method | Diameter (mm) | Packing form | Periphery processing | Thickness (μm) | Machining accuracy Warp (μm) | Machining accuracy TTV (μm) | Laser mark | Dopant, conductivity type | Size | Carrier concentration | Orientation flat length OF (mm) IF (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VGF-p type Zn+Si doped 3 inches |
Available upon quote |
1. (100) ±0.1° |
Etch after lapping (mirror processing is also possible) |
Mirror |
EPDave EPDmax |
VGF (Vertical Gradient Freezing) method |
76.0±0.1 |
Cassette or individual tray |
Bevel |
Thickness (μm) |
<10.0 |
<5.0 |
Option |
P type: Zn+Si doped |
3 inches |
P-type (0.5-3) ×1,019 cm^-3 |
22.0±1.0 |
|
|
VGF-p type Zn+Si doped 2 inch |
Available upon quote |
1. (100) ±0.1° |
Etch after lapping (mirror processing is also possible) |
Mirror |
EPDave EPDmax |
VGF (Vertical Gradient Freezing) method |
50.0±0.1 |
Cassette or individual tray |
Bevel |
240-450 |
<10.0 |
<5.0 |
Option |
P type: Zn+Si doped |
2 inches |
P-type (0.5-3) ×1,019 cm^-3 |
16.0±1.0 |
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