Product
GaN wafer Non-polar GaN square substrate (A side & M side)Handling Company
Toyominato Co., Ltd.Categories
Items marked with have different values depending on the model number.
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Product Image | Part Number | Price (excluding tax) | Azimuth plane | Board thickness | Conductive type | Effective area | Electrical resistivity (300K) | Flatness TTV | Packing method | Primary orientation flat orientation. length | Size | Surface finish | Transition defect density | Warp BOW |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GaN-FS-A-N-S |
Available upon quote |
A side (1,120) side ±1° M plane (1-100) plane ±1° |
350 ±25um | N type (Undoped) | 90% or more | <0.5Ω・cm | 15um or less |
Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets |
Orientation flat direction (1-100) ± 0.5° Orientation flat length 16 ± 1mm |
5mm×10mm, ±0.2mm 5mm×20mm, ±0.2mm |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. N side: Fine ground (non-mirror) |
5×105 pieces/cm2 or less | 20um or less | |
GaN-FS-M-N-S |
Available upon quote |
A side (1,120) side ±1° M plane (1-100) plane ±1° |
350 ±25um | Semi-insulating | 90% or more | >106Ω・cm | 15um or less |
Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets |
Orientation flat direction (1-100) ± 0.5° Orientation flat length 16 ± 1mm |
5mm×10mm, ±0.2mm 5mm×20mm, ±0.2mm |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. N side: Fine ground (non-mirror) |
5×105 pieces/cm2 or less | 20um or less |
Click on the part number for more information about each product