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Response Rate
100.0%
Response Time
7.7hours
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Product
GaN wafer (φ2 inch) Free-Standing GaN SubstrateHandling Company
Toyominato Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Electrical resistivity (300K) | Transition defect density | Surface finish | Diameter | Packing method | Effective area | Azimuth plane | Flatness TTV | Conductive type | Warp BOW | Wafer thickness | Secondary orientation flat direction. length | Primary orientation flat orientation. length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GaN-FS-C-N-C50 |
Available upon quote |
＜0.5Ω・cm |
5×105 pieces/cm2 or less |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. |
Φ50.8mm ± 0.1mm |
Filled with nitrogen in a clean room |
90% or more |
C plane (0001) plane ± 1° |
15um or less |
N type (Undoped) |
20um or less |
350±25um |
Orientation flat direction (11-20) ±3° |
Orientation flat direction (1-100) ±0.5° |
|
|
GaN-FS-C-SI-C50 |
Available upon quote |
＞106Ω・cm |
5×105 pieces/cm2 or less |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. |
Φ50.8mm ± 0.1mm |
Filled with nitrogen in a clean room |
90% or more |
C plane (0001) plane ± 1° |
15um or less |
Semi-insulating |
20um or less |
350±25um |
Orientation flat direction (11-20) ±3° |
Orientation flat direction (1-100) ±0.5° |
Click on the part number for more information about each product
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Reviews shown here are reviews of companies.
Response Rate
100.0%
Response Time
7.7hrs
