Product
GaN wafer (φ2 inch) Free-Standing GaN SubstrateHandling Company
Toyominato Co., Ltd.Categories
Items marked with have different values depending on the model number.
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Product Image | Part Number | Price (excluding tax) | Azimuth plane | Conductive type | Diameter | Effective area | Electrical resistivity (300K) | Flatness TTV | Packing method | Primary orientation flat orientation. length | Secondary orientation flat direction. length | Surface finish | Transition defect density | Wafer thickness | Warp BOW |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GaN-FS-C-N-C50 |
Available upon quote | C plane (0001) plane ± 1° | N type (Undoped) | Φ50.8mm ± 0.1mm | 90% or more | <0.5Ω・cm | 15um or less |
Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets |
Orientation flat direction (1-100) ±0.5° Orientation flat length 16 ± 1mm |
Orientation flat direction (11-20) ±3° Orientation flat length 8 ± 1mm |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. N side: Fine ground (non-mirror) |
5×105 pieces/cm2 or less | 350±25um | 20um or less | |
GaN-FS-C-SI-C50 |
Available upon quote | C plane (0001) plane ± 1° | Semi-insulating | Φ50.8mm ± 0.1mm | 90% or more | >106Ω・cm | 15um or less |
Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets |
Orientation flat direction (1-100) ±0.5° Orientation flat length 16 ± 1mm |
Orientation flat direction (11-20) ±3° Orientation flat length 8 ± 1mm |
Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. N side: Fine ground (non-mirror) |
5×105 pieces/cm2 or less | 350±25um | 20um or less |
Click on the part number for more information about each product