Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125-2SJ125
Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125-Isahaya Electronics Co., Ltd.

Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125
Isahaya Electronics Co., Ltd.


About This Product

2SJ125 is an ultra-small external resin-sealed silicon P-channel junction field effect transistor designed and manufactured for use in low frequency voltage amplification and analog switches. In particular, it has excellent |yfs| characteristics and RDS (ON) characteristics, making it ideal as an element for miniaturization and high-density mounting of electronic equipment such as audio and video equipment. ■Features - Ultra-compact size allows for smaller sets and high-density mounting. ・|yfs| is large |yfs|=4mS (standard) ・RDS (ON) is small RDS (ON) =220Ω (standard) ■Applications General-purpose voltage amplification and analog switch circuits for stereos, cassette decks, VTRs, etc.

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    Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125

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1 Models of Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125

Product Image Part Number Price (excluding tax) Ciss (pF) IDSS (mA) IG (mA) Isahaya package JEITA package P (mW) Polarity RDS (ON) (Ω) VGDO (V) VGS (OFF) (V)
Field effect transistor for low frequency amplification P channel junction type (mini type) 2SJ125-Part Number-2SJ125

2SJ125

Available upon quote 18 -1~-12 -10 Mini type SC-59 150 Pch 220 50 0.3~6

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