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  4. IGBT gate predriver High-performance composite transistor RT8H255C (Isahaya Electronics Co., Ltd.)
IGBT gate predriver High-performance composite transistor RT8H255C-RT8H255C
IGBT gate predriver High-performance composite transistor RT8H255C-Isahaya Electronics Co., Ltd.

IGBT gate predriver High-performance composite transistor RT8H255C
Isahaya Electronics Co., Ltd.

About This Product

RT8H255C is a composite transistor consisting of an NPN transistor, a PNP transistor, and a resistor. By using this transistor, it is possible to downsize the set and significantly reduce the number of parts and man-hours. RT8H255C has a circuit configuration as an IGBT driver, and when applying Low to High to the GATEIN terminal, the B terminal outputs a LOW signal when the voltage exceeds approximately 2.80V. Also, when applying Hgh to Low to the GATEIN terminal, the B terminal outputs a HIGH signal when the voltage becomes approximately 2.48V or less.

■Features

Smaller set size and high-density mounting possible

■Applications

IGBT driver circuit

  • Product

    IGBT gate predriver High-performance composite transistor RT8H255C

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1 Models of IGBT gate predriver High-performance composite transistor RT8H255C

Image Part Number Price (excluding tax) Application example Features Package
IGBT gate predriver High-performance composite transistor RT8H255C-Part Number-RT8H255C

RT8H255C

Available upon quote

As an IGBT gate predrive

With gate protection diode

SC-74

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Isahaya Electronics Co., Ltd.

  • Japan

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