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  4. Hetero epitaxial growth equipment for diamond substrates (Arios Co., Ltd.)
Hetero epitaxial growth equipment for diamond substrates-Hetero epitaxial growth equipment for diamond substrates
Hetero epitaxial growth equipment for diamond substrates-Arios Co., Ltd.

Hetero epitaxial growth equipment for diamond substrates
Arios Co., Ltd.

Arios Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

0.9hours

Very Fast Response

About This Product

■Summary

Hetero-epitaxial growth equipment for diamond substrates This equipment is a special MBE equipment for the purpose of growing heteroepitaxial growth on diamond substrates. Unlike regular MBE equipment, in order to handle small diamond substrates, we use a face-up type substrate heating mechanism, a specially structured aluminum molecular beam cell, an RF radical beam source, a Si beam source, and other combinations to achieve extremely high quality. This allows for the growth of thin films. This equipment can be configured to grow thin films on diamond substrates, create pn junctions on diamond, and create transistors.

■Our equipment is introduced below.

・Waseda University Professor Kawaharada ・Our equipment is featured in Professor Hatano's laboratory introduction at Tokyo Institute of Technology. For the convenience of research, it is possible to measure the amount of flux using BFM and the state of film formation using RHEED. We have devised various techniques to enable us to transport extremely small diamond substrates, perform heteroepitaxial growth, and perform RHEED observation using a single device without breaking the vacuum.

■Features

・Face-up vapor deposition is possible. ・In addition to aluminum, we also have various types of cells that operate downward. ・Filming work can be performed automatically. ・The functional layout of our company, which is unique to our company with extensive knowledge of ultra-high vacuum technology, ensures performance and ease of use despite its small size.

  • Product

    Hetero epitaxial growth equipment for diamond substrates

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1 Models of Hetero epitaxial growth equipment for diamond substrates

Image Part Number Price (excluding tax) Installation space Exhaust system Compatible board size Ultimate pressure Baking temperature Si beam source RHEED RF radical beam source Al cell
Hetero epitaxial growth equipment for diamond substrates-Part Number-Hetero epitaxial growth equipment for diamond substrates

Hetero epitaxial growth equipment for diamond substrates

Available upon quote

2,000mm×800mm

800 L/sec TMP+SCP+N2 Shroud+TSP

MAX 1 inch

1×10^-7 Pa or less (film formation chamber)

MAX 200℃

Mounting flange: CF114
Sample size: φ3×L=20mm

Acceleration voltage: 30kV
RHEED screen

13.55MHz, 500W

Crucible capacity: 5cc
Maximum temperature: 1,000℃

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About Company Handling This Product

Arios Co., Ltd.

Response Rate

100.0%

Response Time

0.9hrs

  • Japan

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