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  3. Microwave Monolithic Integrated Circuits (MMIC)
  4. Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51 (Nisshinbo Micro Devices Inc.)
Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51-NJG1802K51
Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51-Nisshinbo Micro Devices Inc.

Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51
Nisshinbo Micro Devices Inc.

Nisshinbo Micro Devices Inc.'s Response Status

Response Rate

100.0%

Response Time

13.7hours

Relatively Fast Response

About This Product

■Summary

NJG1802K51 is a high power SPDT switch that is ideal for communication terminal applications such as LTE/UMTS/CDMA/GSM. This product supports a switching voltage of 1.8V and features low loss, high isolation, and high linearity up to 2.7GHz. This product has a shutdown function to reduce current consumption. It has a high ESD withstand voltage due to the built-in protection element. Since no DC blocking capacitor is required, the mounting area can be reduced.

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    Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51

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1 Models of Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51

Image Part Number Price (excluding tax) Insertion loss External size (mm) Frequency range (GHz) Operating voltage (V) Operating temperature range (℃) Low distortion Low switching voltage (V) Power level Package Junction temperature (℃) P-0.1dB (dBm) Function
Electronic device products RF devices High power SPDT switch GaAs MMIC NJG1802K51-Part Number-NJG1802K51

NJG1802K51

Available upon quote

0.18dB/ 0.20dB/ 0.23dB typ. @f=0.9GHz/ 1.9GHz/ 2.7GHz

Typ. 2.0x2.0x0.375

0.2 to 6

VDD=2.7 typ.

-40 to 85

IIP3=+73dBm typ. @f=829+849MHz, PIN=24dBm, IIP3=+73dBm typ. @f=1870+1910MHz, PIN=24dBm etc.

VCTL (H) =1.8 typ.

High Power

QFN12-51

150

Typ. 36

SPDT switch

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About Company Handling This Product

Nisshinbo Micro Devices Inc.

Response Rate

100.0%

Response Time

13.7hrs

Company Overview

Nisshinbo Micro Devices Inc., established in 1959, and headquartered in Tokyo, Japan, is a manufacturer of sem...

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  • Japan

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Microwave Monolithic Integrated Circuits (MMIC)
Microwave Monolithic Integrated Circuits (MMIC)　Nisshinbo Micro Devices Inc.
Nisshinbo Micro Devices Inc.

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