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  4. Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7 (Nisshinbo Micro Devices Inc.)

Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7
Nisshinbo Micro Devices Inc.

About This Product

■Summary NJG1812ME4 is a high power DPDT switch ideal for communication applications such as LTE/UMTS/CDMA/GSM. Especially suitable for antenna switching applications. This product supports a switching voltage of 1.8V and features low insertion loss, low distortion, and high linearity up to 3GHz. This product has a high ESD withstand voltage due to the built-in ESD protection element. This product does not require a DC cut capacitor. Adopts EQFN12-E4 package to realize compactness and thinness.

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    Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7

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1 Models of Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7

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NJG1812ME4

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About Company Handling This Product

Nisshinbo Micro Devices Inc.

  • Japan

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Microwave Monolithic Integrated Circuits (MMIC)
Microwave Monolithic Integrated Circuits (MMIC)　Nisshinbo Micro Devices Inc.
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