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Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7
Nisshinbo Micro Devices Inc.

Nisshinbo Micro Devices Inc.'s Response Status

Response Rate

100.0%

Response Time

13.7hours

Relatively Fast Response


About This Product

■Summary

NJG1812ME4 is a high power DPDT switch ideal for communication applications such as LTE/UMTS/CDMA/GSM. Especially suitable for antenna switching applications. This product supports a switching voltage of 1.8V and features low insertion loss, low distortion, and high linearity up to 3GHz. This product has a high ESD withstand voltage due to the built-in ESD protection element. This product does not require a DC cut capacitor. Adopts EQFN12-E4 package to realize compactness and thinness.

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    Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7

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1 Models of Electronic device products RF devices High power DPDT switch GaAs MMIC NJG1814MD7

Image Part Number Price (excluding tax) Insertion loss External size (mm) Frequency range (GHz) Operating voltage (V) Operating temperature range (℃) Remarks Low switching voltage (V) Power level Package Junction temperature (℃) P-0.1dB (dBm) Function

NJG1812ME4

Available upon quote

0.25dB typ. @f=900MHz, PIN=+35dBm, 0.35dB typ. @f=1,900Hz, PIN=+33dBm, etc.

Typ. 2.0x2.0x0.397

0.2 to 3

VDD=2.7 typ.

-40 to 105

2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm, 3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm

VCTL (H) =1.35 to 5.0

High Power

EQFN12-E4

150

Typ. 36

DPDT switch

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About Company Handling This Product

Response Rate

100.0%


Response Time

13.7hrs

Company Overview

Nisshinbo Micro Devices Inc., established in 1959, and headquartered in Tokyo, Japan, is a manufacturer of sem...

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  • Japan

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