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  4. Electronic device products RF devices 10W high power SPDT switch NJG1817ME4 (Nisshinbo Micro Devices Inc.)
Electronic device products RF devices 10W high power SPDT switch NJG1817ME4-NJG1817ME4
Electronic device products RF devices 10W high power SPDT switch NJG1817ME4-Nisshinbo Micro Devices Inc.

Electronic device products RF devices 10W high power SPDT switch NJG1817ME4
Nisshinbo Micro Devices Inc.

Nisshinbo Micro Devices Inc.'s Response Status

Response Rate

100.0%

Response Time

13.7hours

Relatively Fast Response

About This Product

■Summary

The NJG1817ME4 is a GaAs SPDT switch MMIC that is ideal for communication systems and terminals that require high power specifications, such as 5G (Sub-6) small cells and commercial wireless. This product is a high-power switching SPDT switch that supports +40dBm input power and achieves low insertion loss over a wide band up to 6GHz. It also features high-speed switching that is compatible with 5G communication. It has a high ESD withstand voltage due to the built-in ESD protection element. By mounting it in the small 2.0mm x 2.0mm EQFN12-E4 package, we have achieved a smaller and thinner high-power switch.

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    Electronic device products RF devices 10W high power SPDT switch NJG1817ME4

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1 Models of Electronic device products RF devices 10W high power SPDT switch NJG1817ME4

Image Part Number Price (excluding tax) Insertion loss External size (mm) Frequency range (GHz) Operating temperature range (℃) Remarks Low switching voltage (V) Power level Package Junction temperature (℃) Isolation P-0.1dB (dBm) Function
Electronic device products RF devices 10W high power SPDT switch NJG1817ME4-Part Number-NJG1817ME4

NJG1817ME4

Available upon quote

0.35dB typ.@3.85GHz, VCTL (H) =3.3V, 0.40dB typ.@4.7GHz, VCTL (H) =3.3V etc.

Typ. 2.0x2.0x0.397

0.05 to 6

-40 to 105

Fast switching (150 ns typ.)

2.7 to 5.0

High Power

EQFN12-E4

150

27dB typ.@3.85GHz, VCTL (H) =3.3V, 27dB typ.@4.7GHz, VCTL (H) =3.3V etc.

Typ. 40

SPDT switch

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About Company Handling This Product

Nisshinbo Micro Devices Inc.

Response Rate

100.0%

Response Time

13.7hrs

Company Overview

Nisshinbo Micro Devices Inc., established in 1959, and headquartered in Tokyo, Japan, is a manufacturer of sem...

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  • Japan

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