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General -purpose 2D/3D finite element analysis/design software APSYS for semiconductor devices
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About This Product

■ Overview of apsys

APSYS is a general -purpose 2D/3D finite element analysis and design software for semiconductor devices. In addition to the flexible design and simulation environment for semiconductor devices, various physical models are incorporated into Apsys. APSYS is designed so that users can develop their own physical models.

■ Main functions of apsys

In APSYS, as well as the commonly used transportation equation, the equation of fluids and the thermal transportation equation are self -inconsistent. The data output in Apsys is as follows. ・ Current-voltage (i-V) characteristics ・ 2D distribution of potential, electric field, current ・ 2D distribution of hot carrier temperature in fluid dynamics models ・ 2D distribution of lattice temperature used in thermal transport models ・ Band diagram under various bias conditions ・ Results of interaction microscopic response analysis in any frequency band ・ Sub -band of quantum wells using a charged mixed model ・ 2D distribution of impurities occupied and density trapped to deep levels in semiconductors ・ 2D optical scallion distribution of optical devices such as light inspection devices • Release spectrum of LEDs

■ Application examples of Apsys

APSYS can be used to design and analyze almost all devices, except for semiconductor lasers (our product Lastip and PICS3D). APSYS can be used to design the device consisting of the following silicon and compounds: ・ Silicon MOSFET, bipolar transistor, CCD ・ HBT consisting of SIGE HBT, Algaas and IngaAsp ・ Gaas Mesfet and all kinds of light inspection devices ・ Device including multiple weight well

■ Excellent functions of apsys

APSYS is a 2D/3D simulator that solves the scalar -style wave equation for porson equation, continuous equation of current, career energy transportation equation, and optical wave device (conductor light detector). Apsys contains the following physical models and excellent functions: • Hot career fluid dynamics models that have the degree of movement that depends on the electric field or energy ・ A thermal transportation process using a thermal boundary condition that can be set to flexible and parameters containing temperature dependence ・ Thermoelectric release model for carrier transportation between heterose, steep shape, or quantum wells ・ Collision ionization model using a collision ionization coefficient with an electric field or energy dependence ・ The impurities trapped to the deep level and its dynamic models are designed to be applied to the accurate models of semi -insulating and insulating. ・ The state at the border is calculated precisely in consideration of the pins stop of the surface Fermi level, rejuvenation at the boundary, and fixed charge. ・ The frenkel-Poole model of the ionization impurities induced by the electric field is incorporated for several new materials. ・ Simulation at low temperature of 77k or less can also be executed ・ Optical guide mode (multiple mode model) can calculate any complex refractive index distribution. ・ The distorted quantum well (barrier) quantum sub band is calculated using K ・ P theory. ・ Hot career transport ・ In addition to the heterous interface and quantum well models, there are many.

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    General -purpose 2D/3D finite element analysis/design software APSYS for semiconductor devices

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1 Models of General -purpose 2D/3D finite element analysis/design software APSYS for semiconductor devices

Image Part Number Price (excluding tax) OS CPU memory Installation space including OS

Apsys

Available upon quote

Compatible with Windows 11 /10, 64bit Linux (optional)

2GHz

2GB

Recommended 60GB or more network license (optional) that can be calculated on multiple PCs on a network

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