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History
Response Rate
100.0%
Response Time
29.3hours
Relatively Fast Response
Product
Semiconductor ASIC Embedded ArrayHandling Company
Seiko Epson CorporationCategories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Features | Macrocell | Package | Status | Series name |
|---|---|---|---|---|---|---|---|
|
|
S1X80000 |
Available upon quote |
Highly integrated (0.15μm CMOS 4/5 layer wiring process adopted, 74K gates/mm2), high-speed operation (internal gate delay: 34.5ps/1.8V, 2-input NAND Typ.), etc. |
Can be equipped with RAM, PLL, LVDS, RSDS, and various macro cells |
QFP48~256 pins, PBGA, PFBGA, QFN |
MP |
S1X80000 series |
|
|
S1X60000 |
Available upon quote |
High integration (0.25μm CMOS 3/4/5 layer wiring process adopted, number of installed gates: up to 2.5 million gates), high-speed operation (internal gate delay: 107ps/2.5V, 2-input Power NAND Typ.), etc. |
RAM, ROM, Flash, MCU, PLL, LVDS, RSDS, various macro cells can be installed |
QFP48~256 pins, PBGA, PFBGA, QFN |
MP |
S1X60000 series |
|
|
S1X50000 |
Available upon quote |
Highly integrated (0.35μm CMOS 3/4 layer wiring process adopted), high-speed operation (internal gate delay: 150ps/3.3V, 2-input Power NAND Typ.), etc. |
Can be equipped with RAM, ROM, Flash, MCU, PLL, analog cells, LVDS, RSDS, and various macro cells. |
QFP48~256 pins, PBGA, PFBGA, QFN, WCSP |
MP |
S1X50000 series |
|
|
S1X5V000 |
Available upon quote |
High integration (0.35μm CMOS 2/3/4 layer wiring process adopted), high speed operation (internal gate delay: 0.19ns/5.0V, 0.29ns/3.3V, 2-input Power NAND Typ.), etc. |
Can be equipped with RAM, ROM, Flash, MCU, PLL, analog cells, LVDS, RSDS, and various macro cells. |
QFP48~256 pins, PBGA, PFBGA, QFN, WCSP |
MP |
S1X5V000 series |
Click on the part number for more information about each product
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
Response Rate
100.0%
Response Time
29.3hrs
