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  3. GaN Power Devices
  4. LED / GAN application High quality sapphire woe single crystal (C)
  5. 4 "φ x 0.65mm T
LED / GAN application High quality sapphire woe single crystal (C)-K ＆R Creation

4 "φ x 0.65mm T | LED / GAN application High quality sapphire woe single crystal (C)
K ＆R Creation

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Crystal development method

Face roughness

Olifra

TTV, Warp, Bow

others

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  • Part Number

    4 "φ x 0.65mm T

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LED / GAN application High quality sapphire woe single crystal (C) 4 "φ x 0.65mm T's performance table

Image Price (excluding tax) Crystal development method Face roughness Olifra TTV, Warp, Bow others
LED / GAN application High quality sapphire woe single crystal (C)-Part Number-4 "φ x 0.65mm T Available upon quote Kilopros Epi surface RA <0.2nmfineGroundra = 0.8 ~ 1.2UM (11-20) (+/- 0.2 °), 30mm <20um Washing / packing in the Class100 clean room

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GaN Power Devices

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