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Price (excluding tax)
■Original flat direction OF (mm) IF (mm) EJ (Dove-Tail): (OF) (0-1-1) ±0.5°/ (IF) (0-11) ±0.5° or SEMI US (V-Groove): (OF) (01-1) ± 0.5°/ (IF) (011) ±0.5°
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Crystal growth method
Diameter (mm)
Dislocation density (EPD) (cm^-2)
Dopant, conductivity type
Laser mark
Machining accuracy TIR (μm)
Machining accuracy TTV (μm)
Machining accuracy Warp (μm)
Orientation flat length OF (mm) IF (mm)
Packing form
Periphery processing
Plane direction
Resistivity (at 25℃)
Size
Surface finish Back side
Surface finish surface
Surface treatment
Thickness (μm)
Part Number
VGF-Semi-insulating 4 inchHandling Company
DOWA Electronics Co., Ltd.Categories
| Image | Price (excluding tax) | Crystal growth method | Diameter (mm) | Dislocation density (EPD) (cm^-2) | Dopant, conductivity type | Laser mark | Machining accuracy TIR (μm) | Machining accuracy TTV (μm) | Machining accuracy Warp (μm) | Orientation flat length OF (mm) IF (mm) | Packing form | Periphery processing | Plane direction | Resistivity (at 25℃) | Size | Surface finish Back side | Surface finish surface | Surface treatment | Thickness (μm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Available upon quote | VGF (Vertical Gradient Freezing) method | 100.0±0.1 | EPDave</=5,000 | Semi-insulating: undoped (C-doped) | Option | <5.0 | <5.0 | <10.0 | 32.0±1.0 18.0±1.0 (Can be adjusted according to your request) | Cassette or individual tray | Bevel | 1. (100) ±0.1° 2. (100) off 2°±0.1° towards (110) etc. 3.According to your request. | >/=1×107 Ωcm (Adjustable within the above range) | 4 inches | Etch after lapping (mirror processing is also possible) | Etch after lapping (mirror processing is also possible) | Epi lady | Thickness (μm) |
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