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Price (excluding tax)
■Original flat direction OF (mm) IF (mm) EJ (Dove-Tail): (OF) (0-1-1) ±0.05°/ (IF) (0-11) ±0.5° or SEMI US (V-Groove): (OF) (01-1) ± 0.05°/ (IF) (011) ±0.5° *Cleavage and bevel seating are also available.
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Carrier concentration
Crystal growth method
Diameter (mm)
Dislocation density (EPD) (cm^-2)
Dopant, conductivity type
Laser mark
Machining accuracy TTV (μm)
Machining accuracy Warp (μm)
Orientation flat length OF (mm) IF (mm)
Packing form
Periphery processing
Plane direction
Size
Surface finish Back side
Surface finish surface
Thickness (μm)
Part Number
VGF-p type Zn+Si doped 3 inchesHandling Company
DOWA Electronics Co., Ltd.Categories
| Image | Price (excluding tax) | Carrier concentration | Crystal growth method | Diameter (mm) | Dislocation density (EPD) (cm^-2) | Dopant, conductivity type | Laser mark | Machining accuracy TTV (μm) | Machining accuracy Warp (μm) | Orientation flat length OF (mm) IF (mm) | Packing form | Periphery processing | Plane direction | Size | Surface finish Back side | Surface finish surface | Thickness (μm) |
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Available upon quote | P-type (0.5-3) ×1,019 cm^-3 (Adjustable within the above range) | VGF (Vertical Gradient Freezing) method | 76.0±0.1 76.2±0.1 | EPDave</=1500 EPDmax</=10,000 | P type: Zn+Si doped | Option | <5.0 | <10.0 | 22.0±1.0 12.0±1.0 (Can be adjusted according to your request) | Cassette or individual tray | Bevel | 1. (100) ±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3.According to your request | 3 inches | Etch after lapping (mirror processing is also possible) | Mirror | Thickness (μm) |
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Reviews shown here are reviews of companies.
