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Carrier concentration
Crystal growth method
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VGF-n type LED grade 4 inchHandling Company
DOWA Electronics Co., Ltd.Categories
| Image | Price (excluding tax) | Carrier concentration | Crystal growth method | Diameter (mm) | Dislocation density (EPD) (cm^-2) | Dopant, conductivity type | Finished back side | Finished surface | Laser mark | Machining accuracy TTV (μm) | Machining accuracy Warp (μm) | Notch | Orientation flat direction OF (mm) IF (mm) | Orientation flat length OF (mm) IF (mm) | Packing form | Periphery processing | Plane direction | Size | Surface treatment | Thickness (μm) |
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Available upon quote | N-type (0.4-4) ×1,018 cm^-3 (Adjustable within the above range) | VGF (Vertical Gradient Freezing) method | 100.0±0.2 | EPDave</=500 (LED) EPDmax</=5,000 (LED) | N type: Si doped | Etch after lapping (mirror processing is also possible) | Mirror | Option | <10.0 | <15.0 | Not possible | EJ (Dove-Tail): (OF) (0-1-1) ±0.5°/ (IF) (0-11) ±0.5° or SEMI US (V-Groove): (OF) (01-1) ±0.5°/ (IF) (011) ±0.5° | 32.0±1.0 18.0±1.0 (Can be adjusted according to your request) | Cassette or individual tray | Bevel | 1. (100) ±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3.According to your request | 4 inches | Epi lady | Thickness (μm) |
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