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Shinyo Co., Ltd.
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GaN (gallium nitride, gallium nitride) has a band gap about 3 times wider (3.42eV) and a breakdown voltage about 10 times higher (3.0MV/cm) than si...
Shinyo Co., Ltd.
180+ people viewing
Last viewed: 1 day ago
We supply 2, 4, and 6 inch wafers as substrates for GaN epitaxial growth. It is also possible to supply it in ingots. Please feel free to contact us.