Isahaya Electronics Co., Ltd.'s Bipolar Transistors

■Summary 2SA1363 is a resin-encapsulated silicon PNP epitaxial transistor. It is designed and manufactured with high collector loss and especially ...

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2SA1364 is a resin-encapsulated silicon PNP epitaxial transistor. It is designed and manufactured to have high breakdown voltage, large collector c...

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The 2SA1365 is an ultra-small resin-encapsulated silicon PNP epitaxial transistor designed and manufactured with a large collector current and low...

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The 2SA1366 is an ultra-small resin-sealed silicon PNP epitaxial transistor designed and manufactured to have a large collector current and high br...

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The 2SA1368 is a resin-encapsulated silicon PNP epitaxial transistor. It is designed and manufactured to have high collector loss and high voltage ...

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The 2SA1369 is a resin-sealed silicon PNP epitaxial transistor that has high collector loss and collector current, and is designed and manufactured...

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The 2SA1369 is a resin-sealed silicon PNP epitaxial transistor that has high collector loss and collector current, and is designed and manufactured...

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2SA1944 is a silicon PNP epitaxial type transistor. It is designed and manufactured with high withstand voltage, large collector current, and high ...

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The 2SA1945 is a resin-sealed silicon PNP epitaxial transistor designed and manufactured to have a large collector current and high withstand volta...

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The 2SA1946 is a resin-sealed silicon PNP epitaxial transistor designed and manufactured to have a large collector current and a small VCE (sat). C...

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■Features ・Built-in bias resistor (R1=1.0kΩ) ・Set miniaturization and high-density mounting possible ・The RT1P130X series is available as a comp...

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■Features ・Built-in bias resistor (R1=1kΩ, R2=10kΩ) ・Set miniaturization and high-density mounting possible ・The RT1P136X series is available as...

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■Features ・Built-in bias resistor (R1=1kΩ, R2=10kΩ) ・Set miniaturization and high-density mounting possible ■Applications Inverter circuit, swit...

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■Features ・Built-in bias resistor (R1=1kΩ, R2=10kΩ) ・Set miniaturization and high-density mounting possible ■Applications Inverter circuit, swit...

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RT1N137P is a single-chip composite transistor that incorporates a bias resistor into a transistor. By using this transistor, it is possible to dow...

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RT1N137S is a single-chip composite transistor that incorporates a bias resistor into a transistor. By using this transistor, it is possible to dow...

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■Features ・Built-in bias resistor (R1=10kΩ) ・Set miniaturization and high-density mounting possible ・The RT1P140X series is available as a compl...

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■Features ・Built-in bias resistor (R1=10kΩ) ・Set miniaturization and high-density mounting possible ■Applications Inverter circuit, switching ci...

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• Bipolar Transistors

■Features ・Built-in bias resistor (R1=10kΩ, R2=10kΩ) ・Set miniaturization and high-density mounting possible ・The RT1P141X series is available a...

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■Features ・Built-in bias resistor (R1=10kΩ, R2=10kΩ) ・Set miniaturization and high-density mounting possible ■Applications Inverter circuit, swi...

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RT2A00AM1 is a composite PNP transistor with two built-in PNP transistor ISA1235AC1 elements. By using this transistor, it is possible to downsize ...

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RT2C00M is a composite NPN transistor with two built-in 2SC3052 NPN transistors. By using this transistor, it is possible to downsize the set and s...

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RT2C00M is a composite NPN transistor with two built-in 2SC3052 NPN transistors. By using this transistor, it is possible to downsize the set and s...

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RT3A66M is a silicon PNP epitaxial dual transistor with good pair characteristics and is designed for differential amplification. ■Features ・High...

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RT3A66M is a silicon PNP epitaxial dual transistor with good pair characteristics and is designed for differential amplification. ■Features ・High...

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RT3AMMAM1 is a composite PNP transistor with two built-in PNP transistor ISA1235A elements. By using this transistor, it is possible to downsize th...

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RT3AMMAM1 is a composite PNP transistor with two built-in PNP transistor ISA1235A elements. By using this transistor, it is possible to downsize th...

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RT3C66M is a silicon NPN epitaxial dual transistor with good pair characteristics and is designed for differential amplification. ■Features ・High...

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RT3C66M is a silicon NPN epitaxial dual transistor with good pair characteristics and is designed for differential amplification. ■Features ・High...

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RT3C88M is a composite transistor with two built-in NPN transistors. By using this transistor, it is possible to downsize the set and significantly...

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