Silicon carbide-Silicon carbide
Silicon carbide-Shinyo Co., Ltd.

Silicon carbide
Shinyo Co., Ltd.


About This Product

SiC (silicon carbide) has a bandgap about three times wider (3.26eV) than silicon, a thermal conductivity more than three times as wide (4.9W/cm・k), and a dielectric breakdown voltage about It has a characteristic of 10 times (2.8MV/cm), and when the on-resistance is lowered to 10mΩ・cm2, the same as Si, the withstand voltage reaches 1200V. SiC power semiconductor devices are characterized by low on-resistance, short switching time, and high temperature operation, making them suitable for power MOSFETs, IGBTs, Schottky barrier diodes (SBDs), etc. In addition to these semiconductors, it is also used as a substrate for light emitting diodes (LEDs).

  • Product

    Silicon carbide

Share this product


60+ people viewing

Last viewed: 13 hours ago


Free
Since our quotes are free, feel free to use our service.

No Phone Number Required
You won’t have to worry about receiving unnecessary calls.

1 Models of Silicon carbide

Product Image Part Number Price (excluding tax)
Silicon carbide-Part Number-Silicon carbide

Silicon carbide

Available upon quote

Customers who viewed this product also viewed

Other products of Shinyo Co., Ltd.


View more products of Shinyo Co., Ltd.

About Company Handling This Product

This is the version of our website addressed to speakers of English in the United States. If you are a resident of another country, please select the appropriate version of Metoree for your country in the drop-down menu.

Copyright © 2024 Metoree