Silicon carbide
Shinyo Co., Ltd.
About This Product
SiC (silicon carbide) has a bandgap about three times wider (3.26eV) than silicon, a thermal conductivity more than three times as wide (4.9W/cm･k), and a dielectric breakdown voltage about It has a characteristic of 10 times (2.8MV/cm), and when the on-resistance is lowered to 10mΩ・cm2, the same as Si, the withstand voltage reaches 1200V. SiC power semiconductor devices are characterized by low on-resistance, short switching time, and high temperature operation, making them suitable for power MOSFETs, IGBTs, Schottky barrier diodes (SBDs), etc.
In addition to these semiconductors, it is also used as a substrate for light emitting diodes (LEDs).
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Product
Silicon carbide
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Handling Company
Shinyo Co., Ltd.
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Categories
1 Models of Silicon carbide
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Silicon carbide |
Available upon quote |
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About Company Handling This Product
- Japan