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Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1-INJ0002AC1
Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1-Isahaya Electronics Co., Ltd.

Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

■Summary

INJ0002AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.

■Features

・Because the input impedance is high, there is no need to consider drive current. ・Drive voltage -2.5V ・RDS (ON) is low. RDS (ON) =3Ω (TYP) @ID=-100mA,VGs=-4.0V ・Switching speed is fast. - Ultra-compact size allows for smaller sets and high-density mounting.

■Applications

High-speed switching, analog switching, etc.

  • Product

    Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1

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1 Models of Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1

Image Part Number Price (excluding tax) Drive voltage (V) Polarity Isahaya package Tons (ns) Toff (ns) VGSS (V) VDSS (V) Ron (Ω) P (mW) JEITA package ID (A) Coss (pF) Ciss (pF)
Transistor array MOS field effect transistor (MOS-FET) INJ0002AC1-Part Number-INJ0002AC1

INJ0002AC1

Available upon quote

-2.5

Pch

Mini type

14

100

±8

-30

3

200

SC-59

-0.2

7.3

35

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
  • Japan

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