Discrete Avalanche Guaranteed Schottky Barrier Diode
Kyocera Corporation
About This Product
A Schottky barrier diode is a diode that uses a potential barrier (Schottky barrier) created by contact between a metal electrode and an (n-type) semiconductor, rather than a PN junction. Compared to general PN junction diodes, they have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr), making them suitable for switching operations.
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Product
Discrete Avalanche Guaranteed Schottky Barrier Diode
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Handling Company
Kyocera Corporation
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Categories
1 Models of Discrete Avalanche Guaranteed Schottky Barrier Diode
| Product Image | Part Number | Price (excluding tax) | AEC-Q | Connection type | IFSM (A) | IR (mA) | Io (A) | Operating temperature range | PRRSM (W) | Packing form | Packing unit | RoHS compliance status | Rth (j-c) (℃/W) | Series | VFM (V) | VRRM (V) | Weight |
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UCHD30A09 |
Available upon quote | AEC-Q101 | E | 250.0A | 0.100mA | 30.0A | -40℃ ~ 150℃ | 195W | Reel | 2,000 | Yes | 1.50℃/W | T.U. | 0.79V | 90V | 0.590g |
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- Japan