■Features
・Many achievements with SCI rotary cathodes
・It is possible to improve the deposition rate by up to 3 times (e.g. reactive deposition of SiO2)
- Wavelengths from 200nm to 1,100nm can be analyzed with a single sensor, so there is no need to change sensors or filters for each type of target or process.
・One spectrometer can be equipped with 8 spectrometers, so plasma conditions in 8 locations can be measured simultaneously.
・One unit can set up a closed loop that controls 8 mass flow controllers.
・In addition to monitoring plasma emissions, it is also possible to control while monitoring the impedance of the power supply.
・Since we use spectrum analysis, we can constantly monitor the ratio of Ar and reactive gas with high precision, ensuring stable quality.
・Since it uses spectrum analysis, it is possible to detect vacuum leaks and water leaks due to slight abnormalities in light.
・Because it uses spectrum analysis, it is possible to detect slight abnormalities in light when the backing tube is exposed from the target, allowing the target to be used to its maximum efficiency.
・Equipped with a Profibus/Profinet interface, making it easy to integrate with equipment
・Negotiable rental of demo equipment for evaluation
■Summary
Improving deposition speed of reactive process using sputtering
■Target membrane
・Oxide films such as SiO2, TiO2, Al2O3, etc.
・Nitride film such as SiN
・Other sputtering reactive processes
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