About This Product

This is a high-precision, long-term stable pressure sensor that uses silicon-on-sapphire technology and a strain gauge to measure pressure as an electrical signal. Depending on the measurement purpose, it can be connected to various measuring instruments to display, record, control, monitor pressure, etc. Silicon-on-sapphire (SOS) technology involves growing a silicon thin film (epitaxial growth) on a sapphire (Al2O3 single crystal) substrate and processing it into a silicon semiconductor to form a strain gauge. This silicon semiconductor strain gauge and the sapphire substrate (pressure gauge diaphragm) are bonded at the atomic level, creating a highly stable pressure sensor. ■High precision Sapphire, the material of the diaphragm, is a single crystal of aluminum oxide, and has high responsiveness and excellent linearity and hysteresis characteristics. ■High reliability Because silicon semiconductor strain gauges are atomically bonded to a sapphire substrate, they maintain extremely stable characteristics and high reliability. The load characteristics on the negative pressure side are maintained at the same level as the positive pressure side, making it possible to measure compound pressure with high accuracy. ■High heat resistance The sapphire substrate used in SOS technology is itself a highly insulating material, and can be used as a sensor even in high-temperature environments of 350°C. ■Hydrogen gas compatibility Sapphire has excellent hydrogen gas compatibility, solving problems of permeation and embrittlement. ■Applications ・Hydraulic management of construction machinery ・Measurement of pressure inside pipes in narrow spaces, etc. ・Refrigerant pressure monitoring for air conditioners, etc. ・Quality control of gas filled containers - Size, shape, specification accuracy, etc. can be adjusted depending on the application, so it is widely used as a sensor embedded in equipment.

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    SOS method pressure gauge

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2 Models of SOS method pressure gauge

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Product Image Part Number Price (excluding tax) Accuracy Allowable overload Allowable temperature range Cable length Cover IP rating Input resistance Insulation resistance Limit overload Mass Maximum applied voltage Mounting screws Output Output resistance Press-fit inlet Pressure receiving part Rated capacity Recommended applied voltage Temperature compensation range Temperature effect at zero point Temperature effect on output Tightening torque Zero balance

Ns10t

Available upon quote 0.2%R.C. (High precision type 0.1%R.O.) (including nonlinearity, hysteresis, and repeatability) 200%R.C. -40℃to160℃ Φ3.8 4-core shielded high-temperature cable 3m direct connection with loose wire treatment at the end Aluminum (anodized) 55 equivalent 700to1,000Ω 5,000MΩ or more 300%R.C. Approx. 200g (body only) 15V G3/8 (PF3/8) 200, 500KPa: 1.0mV/V±10%
1MPa to 50MPa: 1.5mV/V±10%
700to1,000Ω SUS630or17-4PH Sapphire 200,500kPa,1,2,5,10,20,25,30,35,50MPa 10V -20℃to120℃ 0.2%R.O./10℃ 0.2%LOAD/10℃ 20N・m to 40N・m ±0.05mV/V

Ns30t

Available upon quote 0.2%R.C. (High precision type 0.1%R.O.) (including nonlinearity, hysteresis, repeatability) 200%R.C. -40℃to160℃ Φ3.8 4-core shielded high-temperature cable 3m direct connection with loose wire treatment at the end Stainless 65 equivalent 700to1,000Ω 5,000MΩ or more 300%R.C. Approx. 50g (body only) 15V R1/8 200, 500KPa: 1.0mV/V±10%
1MPa to 10MPa: 1.5mV/V±10%
700to1,000Ω SUS304L Sapphire 200,500kPa,1,2,5,10MPa 10V -20℃to120℃ 0.2%R.O./10℃ 0.2%LOAD/10℃ 10N・m to 20N・m ±0.05mV/V

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