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  4. Xe plasma FIB-SEM system [AMBER X] (Toyo Technica Co., Ltd.)
Xe plasma FIB-SEM system [AMBER X]-AMBER X
Xe plasma FIB-SEM system [AMBER X]-Toyo Technica Co., Ltd.

Xe plasma FIB-SEM system [AMBER X]
Toyo Technica Co., Ltd.

Toyo Technica Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

5.0hours

Very Fast Response

About This Product

■Summary

TESCAN's state-of-the-art AMBER In addition to being able to perform large-area processing at high speed on a wide variety of materials such as power semiconductors, lithium-ion batteries, soft materials, and magnetic materials, it is also possible to perform multimodal imaging such as ToF-SIMS and Raman in the field. This was realized free of charge and with high spatial resolution.

■Features

・The latest FIB-SEM that realizes high-speed processing of FIB cross sections with a maximum width of 1 mm. ・Ga-free micro sample preparation ・Equipped with multiple TESCAN proprietary technologies such as Rocking Stage that suppresses artifacts such as curtaining ・Ultra-high resolution, field-free SEM imaging ・Secondary electron/backscattered electron detection using in-column detector ・Three-dimensional structure analysis using TESCAN's patented technology Static 3D-EBSD ・Can be equipped with ToF-SIMS using FIB as the primary ion source ・Can be combined with confocal Raman microscope

■Processing area (time)

Xe plasma FIBs achieve over 50 times higher milling rates compared to Ga FIBs. The machining range, which was previously limited to a few 10μm, has now exceeded 100μm, and has now achieved machining of up to 1mm. Additionally, by installing TESCAN's proprietary field-free UHR SEM column, it is possible to obtain large-capacity 3D tomography images with high spatial resolution.

■Contamination during micro sample preparation and chemical analysis

Since Xe ions are chemically and electrically inert, metal compound formation/segregation and contamination due to ion injection do not occur. Therefore, there is no need to consider changes in the physical properties of the material or spectral interference during chemical analysis using SEM-EDS or FIB-SIMS.

  • Product

    Xe plasma FIB-SEM system [AMBER X]

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1 Models of Xe plasma FIB-SEM system [AMBER X]

Image Part Number Price (excluding tax) Electron gun Electron optical system Accelerating voltage Electron optical system resolution Maximum observation field Maximum probe current Low vacuum mode (optional) Probe current Ion gun Ion optical system acceleration voltage Ion optical system resolution SEM column SEM-FIB Coincidence FIB column
Xe plasma FIB-SEM system [AMBER X]-Part Number-AMBER X

AMBER X

Available upon quote

High brightness schottky emitter

50V~30kV

Standard mode
0.9nm at 15kV
1.5nm at 1kV

Beam deceleration mode
1.3nm at 1kV

STEM
0.8nm at 30kV

50mm at max WD

400nA

Vacuum degree ~500Pa

1pA~3μA

Xe plasma FIB (ECR type)

3kV~30kV

<12nm at 30kV

BrightBeamTM column equipped with electrostatic field/magnetic field compound lens

WDSEM=6mm

I-FIB+

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About Company Handling This Product

Toyo Technica Co., Ltd.

Response Rate

100.0%

Response Time

5.0hrs

  • Japan

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Plasma Cleaning Systems
Plasma Cleaning Systems　Toyo Technica Co., Ltd.
Toyo Technica Co., Ltd.

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