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■Summary Semiconductor ALD/CVD precursors are the core raw materials for semiconductor thin film deposition processes, allowing metal/oxide/nitride thin films to be prepared by chemical vapor deposition (CVD) and atomic layer deposition (ALD), and - Used in 14nm and even 7nm advanced technology node IC manufacturing processes. Even the 7nm advanced technology node of integrated circuit manufacturing process is widely used in high-end chip manufacturing, including logic chips, AI chips, 5G chips, mass memory, and cloud computing chips. We have a wide variety of ALD/CVD precursor materials and technologies, and can provide a wide variety of products including trimethylaluminum.

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    CVD/ALD materials

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10 Models of CVD/ALD materials

Items marked with have different values depending on the model number.

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Product Image Part Number Price (excluding tax) CAS Code Element English chemical name

Trimethylaluminum

Available upon quote 75-24-1 TMA Al Trimethylaluminum

Trimethyl (trimethylphosphine) gold

Available upon quote 33012-33-8 Me3Au (PMe3) Au Trimethyl (trimethylphosphine) gold

Trimethyl (triethylphosphine) gold

Available upon quote - Me3Au (PEt3) Au Trimethyl (triethylphosphine) gold

Dicarbonylcyclopentadienyl cobalt

Available upon quote 12078-25-0 CpCo(CO)2 Co Carbonyl cyclopentadienyl cobalt

N, N′-di-tert-butylethylaminocobalt

Available upon quote - Co (t-Bu-Me-AMD) 2 Co Bis (N,N'-di-t-butylacetamidinato) cobalt

Dimethylamine-2-propanol copper

Available upon quote 185827-91-2 Cu (dmap) 2 Cu Bis (dimethylamino-2-propoxy) copper

Bis(hexafluoroacetylacetonato) copper

Available upon quote 14781-45-4 Cu (hfac) 2 Cu Copper hexafluoroacetylacetonate

N, N′-diisopropylethylaminocopper

Available upon quote - Cu (i-Pr-Me-AMD) 2 Cu Bis (N,N'-di-isopropylacetamidinato) copper

N, N′-di-tert-butylethylazinyl copper

Available upon quote - Cu (t-Bu-Me-AMD) 2 Cu Bis (N,N'-di-t-butylacetamidinato) copper

Tetra (dimethylamine) germanium

Available upon quote 7344-40-3 TDMAGe Ge Tetrakis (dimethylamino) germanium

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