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TSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
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| Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Handle layer layer thickness range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer resistivity | Handle layer doping | Handle layer dopant type | Handle layer silicon growth method | Handle thickness tolerance range | Handle thickness | Device layer thickness | Device layer crystal orientation | Device layer Final field oxide film | Device layer planarization | Device layer Buried layer implant | Device layer low efficiency | Device layer doping | Device layer dopant type | Device layer trench lateral diffusion doping | Device layer Trench filling-oxide film (both sides) | Device layer Trench filling-polysilicon | Device layer trench line width | Device layer trench aspect ratio | Device layer trench mask tone | Device layer trench mask type | Device layer Silicon growth method | Device Thickness Tolerance Range |
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TSOI Wafer Wafer diameter 100mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
350-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
350-800μm |
≥1.5-100μm |
100, 111 or 110 |
Thermal oxide film + TEOS up to 1μm |
CMP |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
Phosphorus |
0.1-1.0μm |
To full (doped or undoped polysilicon) |
>2μm |
15:1 |
Positive resistance |
E-beam master for projection aligner |
CZ, MCZ or FZ |
±0.5 μm |
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|
TSOI Wafer Wafer diameter 125mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
350-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
350-800μm |
≥1.5-100μm |
100, 111 or 110 |
Thermal oxide film + TEOS up to 1μm |
CMP |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
Phosphorus |
0.1-1.0μm |
To full (doped or undoped polysilicon) |
>2μm |
15:1 |
Positive resistance |
E-beam master for projection aligner |
CZ, MCZ or FZ |
±0.5 μm |
|
|
TSOI Wafer Wafer diameter 150mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
350-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
350-800μm |
≥1.5-100μm |
100, 111 or 110 |
Thermal oxide film + TEOS up to 1μm |
CMP |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
Phosphorus |
0.1-1.0μm |
To full (doped or undoped polysilicon) |
>2μm |
15:1 |
Positive resistance |
E-beam master for projection aligner |
CZ, MCZ or FZ |
±0.5 μm |
Click on the part number for more information about each product
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