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CSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Handle layer layer thickness range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer resistivity | Handle layer doping | Handle layer dopant type | Handle layer silicon growth method | Handle thickness tolerance range | Handle thickness | Device layer thickness | Device layer thin film thickness/SOI thickness | Device layer crystal orientation | Device layer minimum bonding size characteristics | Device layer Buried layer implant | Device layer low efficiency | Device layer doping | Device layer dopant type | Device layer Silicon growth method | Device layer Cavity creation location | Device layer cavity depth | Device layer cavity SPAN (width):thin film (device) thickness ratio | Device Thickness Tolerance Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CSOI Wafer Wafer diameter 100mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
200-1,100μm |
≥1.5μm |
>2μm |
100, 111 or 110 |
20μm |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
Handle, device or embedded layer |
1-30μm @ +/-10%, 31-300μm @+/-20% |
<50:1 μm (by design) |
±0.5 μm |
|
|
CSOI Wafer Wafer diameter 125mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
200-1,100μm |
≥1.5μm |
>2μm |
100, 111 or 110 |
20μm |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
Handle, device or embedded layer |
1-30μm @ +/-10%, 31-300μm @+/-20% |
<50:1 μm (by design) |
±0.5 μm |
|
|
CSOI Wafer Wafer diameter 150mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
200-1,100μm |
≥1.5μm |
>2μm |
100, 111 or 110 |
20μm |
N type or P type |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
Handle, device or embedded layer |
1-30μm @ +/-10%, 31-300μm @+/-20% |
<50:1 μm (by design) |
±0.5 μm |
Click on the part number for more information about each product
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