CSOI Wafer
Icemos Technology Japan Co., Ltd.
About This Product
We provide 100-150mm cavity bonded SOI wafers for a wide range of MEMS fields. With years of experience in deep silicon etch and advanced wafer bonding technology, we are able to turn cavity-specific materials into innovative products.
The structure has a pre-etched cavity under a silicon thin film. You can design advanced devices to meet market demands.
■Proposal example
・Icemos' advanced bonding technology and expertise
・Reduced adhesion problems during release
・Simplified manufacturing flow
・Low cost Cavity SOI/Si-Si solution
・Highly flexible structure according to required applications
We can provide a variety of methods for your cavity bonding SOI to suit your requirements, including Cavity-SAM and Auto Visual Inspection as required. Incorporating benefits and adding advanced features to cavity bonding SOI, unlocking possibilities.
■Application
・Pressure sensor
・Microphone
・Inertial MEMS
・Microfluidic device
・Resonator
■Final market
・Telecommunications
·medical care
·car
・Home appliances
·musical instrument
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Product
CSOI Wafer
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Handling Company
Icemos Technology Japan Co., Ltd.
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Categories
3 Models of CSOI Wafer
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Cavity creation location | Device layer Silicon growth method | Device layer cavity SPAN (width):thin film (device) thickness ratio | Device layer cavity depth | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer low efficiency | Device layer minimum bonding size characteristics | Device layer thickness | Device layer thin film thickness/SOI thickness | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle thickness | Handle thickness tolerance range |
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CSOI Wafer Wafer diameter 100mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Handle, device or embedded layer | CZ, MCZ or FZ | <50:1 μm (by design) | 1-30μm @ +/-10%, 31-300μm @+/-20% | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | 20μm | ≥1.5μm | >2μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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CSOI Wafer Wafer diameter 125mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Handle, device or embedded layer | CZ, MCZ or FZ | <50:1 μm (by design) | 1-30μm @ +/-10%, 31-300μm @+/-20% | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | 20μm | ≥1.5μm | >2μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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CSOI Wafer Wafer diameter 150mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Handle, device or embedded layer | CZ, MCZ or FZ | <50:1 μm (by design) | 1-30μm @ +/-10%, 31-300μm @+/-20% | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | 20μm | ≥1.5μm | >2μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
Click on the part number for more information about each product
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