All Categories
History
Product
DSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Handle layer thickness tolerance range | Handle layer doping | Handle layer dopant type | Handle layer layer thickness range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer resistivity | Handle layer thickness | Handle layer silicon growth method | Device layer (first film, second film) film thickness | Device layer (first film, second film) crystal orientation | Device layer (first film, second film) resistivity | Device layer (first film, second film) thickness tolerance range | Device layer (first film, second film) doping | Device layer (first film, second film) dopant type | Device layer (first film, second film) Silicon growth method |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DSOI Wafer Wafer diameter 100mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
±5μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
±0.5 μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
|
|
DSOI Wafer Wafer diameter 125mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
±5μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
±0.5 μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
|
|
DSOI Wafer Wafer diameter 150mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
±5μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
±0.5 μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
|
|
DSOI Wafer Wafer diameter 200mm |
Available upon quote |
0.2-4.0μm by handle, device or both wafers |
±5μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
450-1,100μm |
CZ, MCZ or FZ |
≥5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
±0.8 μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
Click on the part number for more information about each product
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
