DSOI Wafer
Icemos Technology Japan Co., Ltd.
About This Product
Widely used for IC and MEMS.
An application engineer can help you select the best combination of parameters to process your DSOI wafer. We can handle everything from small lots at the experimental development level to mass production. MEMS process engineers also have experience in optical, inertial, biological, and other MEMS fields. We also offer additional foundry services such as MEMS, trench etching, and isolation structures.
With our processes based on 6 Sigma statistical control methods, we strive for world-class product quality through continuous improvement, and remain the ideal partner for our customers.
■Application
・SOI solution for MEMS/MST
・Microfluidics/flow sensor
・RF MEMS
・Light macro machine
・Optoelectronics
・Optical MEMS
■Final market
・Telecommunications
·medical care
·car
・Home appliances
・Security
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Product
DSOI Wafer
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Handling Company
Icemos Technology Japan Co., Ltd.
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Categories
4 Models of DSOI Wafer
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Device layer (first film, second film) Silicon growth method | Device layer (first film, second film) crystal orientation | Device layer (first film, second film) dopant type | Device layer (first film, second film) doping | Device layer (first film, second film) film thickness | Device layer (first film, second film) resistivity | Device layer (first film, second film) thickness tolerance range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
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DSOI Wafer Wafer diameter 100mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥1.5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.5 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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DSOI Wafer Wafer diameter 125mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥1.5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.5 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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DSOI Wafer Wafer diameter 150mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥1.5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.5 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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DSOI Wafer Wafer diameter 200mm |
Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.8 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 450-1,100μm | ±5μm |
Click on the part number for more information about each product
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