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DSP WafersHandling Company
Icemos Technology Japan Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Crystal orientation | Roughness | Thermal oxidation Field oxide film thickness | Thickness deviation (TTV) | Low efficiency | Doping | Dopant type | Silicon growth method | Wafer thickness tolerance range | Wafer thickness | Warp | Bow |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DSP Wafer Wafer diameter 100mm |
Available upon quote |
100, 111 or 110 |
≤2Å |
0.2-4.0 μm |
≤1μm |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±2μm |
200-1,100μm |
≤40μm |
≤40μm |
|
|
DSP Wafer Wafer diameter 125mm |
Available upon quote |
100, 111 or 110 |
≤2Å |
0.2-4.0 μm |
≤1μm |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±2μm |
200-1,100μm |
≤40μm |
≤40μm |
|
|
DSP Wafer Wafer diameter 150mm |
Available upon quote |
100, 111 or 110 |
≤2Å |
0.2-4.0 μm |
≤1μm |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±2μm |
200-1,100μm |
≤40μm |
≤40μm |
|
|
DSP Wafer Wafer diameter 200mm |
Available upon quote |
100, 111 or 110 |
≤2Å |
0.2-4.0 μm |
≤2μm |
≤0.001 - ≥10,000 Ω-cm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±5μm |
450-1,100μm |
≤40μm |
≤40μm |
Click on the part number for more information about each product
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