SiSi Wafer
Icemos Technology Japan Co., Ltd.
About This Product
It is a highly cost-effective material that can be used as an alternative to materials traditionally used for power devices and PiN diodes, such as conventional thick epitaxial or inverted epitaxial epitaxial layers. Direct wafer bonding technology allows the creation of silicon substrates containing a variety of single-crystal silicon.
The resistance range is from 1mΩ-cm to 10kΩ-cm, and the orientation direction can be arranged with N type and P type materials. High quality, low leakage and warp, and low defect density. Layer thickness variation less than +/-0.5um. The transition level from high to low concentration can also be adjusted to suit your application.
■Application
・High voltage PIN diode
・RF attenuator
・Photodetector
・X-ray detector
・IR infrared sensor
・High voltage power devices
・Replacement from epi material
■Main features
・High quality
・Low cost
・Low defect density
・Good film uniformity
・Multi-layer
・Sharp concentration transition level
・Resistivity up to 10kΩ-cm
・Good interface quality – through high-resolution thumb inspection
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Product
SiSi Wafer
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Handling Company
Icemos Technology Japan Co., Ltd.
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Categories
4 Models of SiSi Wafer
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Silicon growth method | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer resistivity | Device layer thickness | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
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SiSi Wafer Wafer diameter 100mm |
Available upon quote | ±0.5μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥20μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SiSi Wafer Wafer diameter 125mm |
Available upon quote | ±0.5μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥20μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SiSi Wafer Wafer diameter 150mm |
Available upon quote | ±0.5μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥20μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SiSi Wafer Wafer diameter 200mm |
Available upon quote | ±0.8μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥20μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
Click on the part number for more information about each product
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