All Categories
History
Product
SOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Handle layer thickness tolerance range | Handle layer layer thickness range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer resistivity | Handle layer thickness | Handle layer doping | Handle layer dopant type | Handle layer silicon growth method | Device layer thickness | Device layer crystal orientation | Device layer resistivity | Device layer Buried layer implant | Device layer doping | Device layer dopant type | Device layer Silicon growth method | Device Thickness Tolerance Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SOI Wafer Wafer diameter 100mm |
Available upon quote |
0.2-4.0μm grown on handle, device or both |
±5μm |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type or P type |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±0.5 μm |
|
|
SOI Wafer Wafer diameter 125mm |
Available upon quote |
0.2-4.0μm grown on handle, device or both |
±5μm |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type or P type |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±0.5 μm |
|
|
SOI Wafer Wafer diameter 150mm |
Available upon quote |
0.2-4.0μm grown on handle, device or both |
±5μm |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
≥1.5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type or P type |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±0.5 μm |
|
|
SOI Wafer Wafer diameter 200mm |
Available upon quote |
0.2-4.0μm grown on handle, device or both |
±5μm |
280-1,150μm |
By lapping, etching or polishing |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
200-1,100μm |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
≥5μm |
100, 111 or 110 |
≤0.001 - ≥10,000 Ω-cm |
N type or P type |
N type: Phos, Red Phos, Sb＆As P type: Boron |
N or P |
CZ, MCZ or FZ |
±0.8 μm |
Click on the part number for more information about each product
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
