SOI Wafer
Icemos Technology Japan Co., Ltd.
About This Product
It is a wafer with specifications that can be applied to a wide range of applications such as IC and MEMS applications, and can respond to a wide range of markets.
Through experience with various SOI substrates, our highly skilled team of application engineers will help you select parameter estimates according to your requirements and provide you with the perfect custom SOI solution. We constantly promote continuous improvement through process management based on 6 Sigma statistical control methods, and provide world-class product quality. With our fully competitive costs and flexible response, we will continue to be an ideal partner for SOI.
■Application
・Advanced pressure sensor
・Accelerometer
・Gyroscope
・Microfluidics/flow sensor
・RF MEMS
・Optical micromachines/optical MEMs
・Optoelectronics
・Smart power
・Cutting-edge Analog IC technology
・Microphone
・Luxury watches
■Final market
・Telecommunications
·medical care
·car
・Consumer
·musical instrument
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Product
SOI Wafer
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Handling Company
Icemos Technology Japan Co., Ltd.
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Categories
4 Models of SOI Wafer
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Silicon growth method | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer resistivity | Device layer thickness | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
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SOI Wafer Wafer diameter 100mm |
Available upon quote | 0.2-4.0μm grown on handle, device or both | ±0.5 μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥1.5μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SOI Wafer Wafer diameter 125mm |
Available upon quote | 0.2-4.0μm grown on handle, device or both | ±0.5 μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥1.5μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SOI Wafer Wafer diameter 150mm |
Available upon quote | 0.2-4.0μm grown on handle, device or both | ±0.5 μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥1.5μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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SOI Wafer Wafer diameter 200mm |
Available upon quote | 0.2-4.0μm grown on handle, device or both | ±0.8 μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥5μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
Click on the part number for more information about each product
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