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Laser related Picosecond IR high power laser-Leonis-1064-200
Laser related Picosecond IR high power laser-Shibuya Optical Co., Ltd.

Laser related Picosecond IR high power laser
Shibuya Optical Co., Ltd.


About This Product

■Picosecond laser

The pulse width is 1/1 trillionth of a second (10-12 seconds), making it suitable for high-precision micromachining. It excels in processing heat-sensitive materials and is used for processing polymers and ceramics. Applications include microfabrication, thin film patterning, and aesthetic medicine (such as stain removal).

■IR laser

In precision laser processing of transparent materials, the trend is to use a femtosecond laser, which causes microscopic non-thermal ablation, to be irradiated at high repetition rates at the limit of heat accumulation on the workpiece side. In addition, picosecond lasers have been developed with high energy and high repetition rate oscillations for high throughput, with pulse widths and energy that allow the maximum amount of ablation to be obtained without generating conventional debris or cracks.

■Picosecond IR high power laser

- Significant throughput improvement due to high pulse energy and high repetition rate (~5MHz), average power ≧500W. - Uniform ablation due to high pulse-to-pulse energy stability. ・Compact and robust internal structure with excellent optical, mechanical, and electrical properties. ・Applicable materials: secondary battery anodes and cathodes, silicon wafers ・Processing examples: cutting the anode and cathode of laminated batteries, dicing of semiconductor wafers

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    Laser related Picosecond IR high power laser

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1 Models of Laser related Picosecond IR high power laser

Image Part Number Price (excluding tax) Burst mode Pulse energy Pulse width Beam quality Beam diameter Center wavelength Polarized light (linear) Output Output stability External control Spread angle (full width) Roundness (near field) Roundness (far field) Repetition
Laser related Picosecond IR high power laser-Part Number-Leonis-1064-200

Leonis-1064-200

Available upon quote

Burst1~10

≧200uJ

≦10ps (Gaussian)

M2≦1.3

~3.0mm Customizable

1,064nm

Vertical

200W@1MHz

≦1% (8hours,RMS)

POD&PSO&GATE

≦1.0mrad

≧90%

≧90%

1Hz~5MHz

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