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  4. SiC wafer (Doujin Sangyo Co., Ltd.)
SiC wafer-Φ2"SiC wafer
SiC wafer-Doujin Sangyo Co., Ltd.

SiC wafer
Doujin Sangyo Co., Ltd.

About This Product

■Basic content

・Diameter: Φ2", Φ4", Φ6", Φ8" ・Thickness: 150µm, 350µm, 500µm, 600µm, 900µm, special specifications available ・Poly type: 4H ・MPD: ≤0.5/cm2, ≤5/cm2, ≤10/cm2 ・Conductivity: N-Type, Semi-insulating ・Resistivity: N-Type (0.015-0.028Ω・cm), Semi-insulating (>1x106Ω・cm) ・Plane orientation: <0001>0 ° /4 °0ff ± 0.5 ° ・Order quantity: 1 piece or more ・Production capacity: More than 10,000 pieces/month ・Delivery time: 3 weeks ~, items in stock can be delivered immediately

■SiC processing

・Special thickness processing ・Special shape processing ・Si surface/C surface grinding/polishing 2” to 8” ・Dicing processing

■Usage example

・For substrates: LED substrates, power device substrates, sensor substrates, etc. ・For mechanical equipment and processing technology development: grinding/polishing equipment, laser processing equipment, etc.

  • Product

    SiC wafer

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1 Models of SiC wafer

Image Part Number Price (excluding tax)
SiC wafer-Part Number-Φ2"SiC wafer

Φ2"SiC wafer

Available upon quote

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About Company Handling This Product

Doujin Sangyo Co., Ltd.

Related search keywords

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