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About This Product
Silicon carbide (SiC) or silicon carbide is a crystalline material in which carbon (C) and silicon (Si) are covalently bonded in a one-to-one ratio.
The biggest feature of SiC semiconductors is that their bandgap is 3.25eV, three times wider than conventional Si semiconductors. For this reason, the electric field strength that leads to dielectric breakdown is 3MV/cm, about 10 times larger. In addition, its thermal conductivity is more than three times that of Si, and its electrical characteristics are stable even at high temperatures of 300°C or higher, and when it is made into a device, the power loss inside the device is 1/1 that of Si semiconductors. It can be kept down to around 10. Furthermore, it has excellent chemical resistance and is more resistant to radiation than Si semiconductors. Due to these characteristics, SiC is expected to be used as a semiconductor material that is smaller, has lower power consumption, is more efficient than conventional Si semiconductors, is a power device with high efficiency, is a high-frequency device, and has excellent radiation resistance.
Until now, almost pure silicon has been used for power device wafers. As a result, there is a strong tendency for SiC to emerge with a voltage rating of 600V. In particular, there is a view that the application will expand to electric railways, power conditioners for power generation, automobiles, etc. We also provide various precision processing such as SiC slicing, grinding, and polishing.
■4H-SiC manufacturing method
Sublimation method (PVT, physical vapor transport method)
■Applications
Various semiconductor substrates: power devices, high frequency devices, heat sinks, LEDs, UV sensors, etc.
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Product
Silicon carbide/SiC
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