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Single crystal silicon wafer-Single crystal silicon wafer Φ2
Single crystal silicon wafer-Doujin Sangyo Co., Ltd.

Single crystal silicon wafer
Doujin Sangyo Co., Ltd.


About This Product

In addition to being produced at a factory in Japan, we also outsource production to a Chinese manufacturer. Chinese manufacturers mainly produce small diameter sizes, and large diameter sizes from Φ8" to Φ16" are made in Japan.

■Wafer processing

Slicing, lapping, etching, polishing (single-sided/double-sided), film attachment, back gliding, dicing, monitor wafer reprocessing, etc.

■Usage example

・For substrates: various device substrates, dummy substrates, optical substrates, solar substrates, etc. ・For mechanical device development: grinding machines, polishing machines, dicers, laser equipment, robots, surface analysis, etc.

■Silicon wafer manufacturing process

・Single crystal pulling (CZ method): A black heater, graphite crucible, quartz crucible, and POLY silicon are set in a pulling device, heated and melted under reduced pressure in an inert atmosphere, and a seed crystal is attached and gradually pulled up. ・Perimeter grinding: Cut the ingot to a specified length and grind the outer periphery to a specified diameter. Add a plane (orientation flat) or groove (notch) to a part of the outer periphery to indicate the crystal orientation. ・Slice processing: Cutting the ingot into wafer shapes using a wire saw method or internal blade method. ・Bevel processing: Grind the outer circumference of the wafer to the product diameter using a diamond grindstone, and grind and chamfer the end face into an arc shape. ・Lapping: The carrier holding the wafer rotates between the rotating upper and lower lapping machines, supplying abrasive grains and polishing both sides. ・Etching: Etching is performed while rotating the jig in which the wafer is set in an etching solution, completely removing the layer destroyed by the machining process in the previous process. ・Donor elimination heat treatment: Heat treatment is performed using a diffusion furnace to decompose unstable donors (n-type impurities) caused by oxygen generated during crystal growth and restore the original resistivity. ・Polishing: The plate with the wafer bonded is pressed against a rotating surface plate covered with polishing cloth, and CMP polishing is continued while supplying polishing agent until the surface becomes a mirror surface. ・Cleaning: Wash the wafer with chemicals and ultrapure water to clean it chemically and physically. - Inspection: A visual inspection is performed by shining a high-intensity spotlight onto the wafer surface, and a device is used to inspect flatness, specific resistance, the number of microscopic particles attached to the surface, etc. - Packaging and shipping: Wafers are placed in a clean shipping case and sealed in a special bag that does not allow moisture to pass through.

  • Product

    Single crystal silicon wafer

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1 Models of Single crystal silicon wafer

Image Part Number Price (excluding tax)
Single crystal silicon wafer-Part Number-Single crystal silicon wafer Φ2

Single crystal silicon wafer Φ2

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