This product is registered by Doujin Sangyo Co., Ltd..
About This Product
Sapphire Wafer
In addition to manufacturing at our domestic factory in Japan, we also outsource production to excellent manufacturers in China, South Korea, and Taiwan.
■Features
・Diameter: Φ1", Φ1.5", Φ2", Φ2.5", Φ3", Φ4", Φ4.5", Φ5", Φ6", Φ8" Special specification possible
・Thickness: 150μm to 3mm, special specifications available
・Crystal orientation: C plane (0001), A plane (11-20), R plane (-1012), M plane (10-10)
・Azimuth tolerance: ±0.1°, off angle can be specified
・Order quantity: 1 piece or more
・Delivery time: 3 weeks ~, items in stock can be delivered immediately
■Sapphire
Sapphire (Al2O3) has excellent chemical stability, thermal conductivity, and mechanical strength, and is widely used as a material that exhibits high transparency in the ultraviolet to infrared light range. At Doujin Sangyo, we mainly use the Kyropoulos manufacturing method, which handles everything from growing single crystal sapphire to slicing, grinding/polishing, and processing.
■Characteristics of sapphire
・Hardness: Excellent strength and wear resistance, Mohs hardness 9
・Transparency: High transmittance in the ultraviolet to infrared light region (200 to 7,000 nm)
・Corrosion resistance: Not affected by most acids and alkalis
・Heat resistance: ~2,000℃
・Insulation: Insulator, resistivity 10E14Ω・cm (25℃)
■Characteristics of Kiropoulos manufacturing method
Kyropoulos (Kyropoulos) method, also known as Kyropoulos or Kyropoulos. There are various other sapphire manufacturing methods, such as the Bernoulli method, CZ method, EFG method, HEM method, and CHES method, but we mainly use the Kiropoulos method, focusing on its high crystal quality and productivity. Masu.
- Large sapphire substrates can be obtained efficiently
・High crystal quality and stable
・High production efficiency
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