Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-RT3C88M
Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-Isahaya Electronics Co., Ltd.

Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M
Isahaya Electronics Co., Ltd.


About This Product

RT3C88M is a composite transistor with two built-in NPN transistors. By using this transistor, it is possible to downsize the set and significantly reduce the number of products and man-hours. ■Features ・High withstand voltage VCEO=160V ・High DC current amplification factor ・Low collector saturation voltage VCE (sat) =0.15V (maximum) ■Applications For high voltage switches

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    Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M

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1 Models of Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M

Product Image Part Number Price (excluding tax) AEC compatible Isahaya package P (mW) Remarks TR1 IC (mA) TR1 VCEO (V) TR1 hFE TR2 IC (mA) TR2 VCEO (V) TR2 hFE
Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-Part Number-RT3C88M

RT3C88M

Available upon quote NPN+NPN SC-88 200 INC6017A×2 100 160 200~500 100 160 200~500

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