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Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-RT3C88M
Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-Isahaya Electronics Co., Ltd.

Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

RT3C88M is a composite transistor with two built-in NPN transistors. By using this transistor, it is possible to downsize the set and significantly reduce the number of products and man-hours.

■Features

・High withstand voltage VCEO=160V ・High DC current amplification factor ・Low collector saturation voltage VCE (sat) =0.15V (maximum)

■Applications

For high voltage switches

  • Product

    Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M

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1 Models of Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M

Image Part Number Price (excluding tax) Remarks Isahaya package TR2 hFE TR2 VCEO (V) TR2 IC (mA) TR1 hFE TR1 VCEO (V) TR1 IC (mA) P (mW) AEC compatible
Silicon NPN epitaxial dual transistor for high voltage switch RT3C88M-Part Number-RT3C88M

RT3C88M

Available upon quote

INC6017A×2

SC-88

200~500

160

100

200~500

160

100

200

NPN+NPN

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
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