Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150
Isahaya Electronics Co., Ltd.
About This Product
RT3C66M is a silicon NPN epitaxial dual transistor with good pair characteristics and is designed for differential amplification.
■Features
・High withstand voltage VCEO=160V
・Good pair characteristics hFE1/hFE2=1.0 standard｜VBE1-VBE2｜=0mV standard
・High DC current amplification factor
■Applications
For differential voltage amplification
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Product
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150
| Product Image | Part Number | Price (excluding tax) | AEC compatible | Isahaya package | JEDEC package | P (mW) | Remarks | TR1 IC (mA) | TR1 VCEO (V) | TR1 hFE | TR2 IC (mA) | TR2 VCEO (V) | TR2 hFE |
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RT3C66M-T150 |
Available upon quote | NPN+NPN | SC-88 | ○ | 200 | INC6006A×2 | 100 | 160 | 72~330 | 100 | 160 | 72~330 |
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