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  4. Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150 (Isahaya Electronics Co., Ltd.)
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150-RT3C66M-T150
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150-Isahaya Electronics Co., Ltd.

Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Company Review

5.0

Very Fast Response

About This Product

RT3C66M is a silicon NPN epitaxial dual transistor with good pair characteristics and is designed for differential amplification.

■Features

・High withstand voltage VCEO=160V ・Good pair characteristics hFE1/hFE2=1.0 standard｜VBE1-VBE2｜=0mV standard ・High DC current amplification factor

■Applications

For differential voltage amplification

  • Product

    Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150

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1 Models of Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150

Image Part Number Price (excluding tax) Remarks Isahaya package TR2 hFE TR2 VCEO (V) TR2 IC (mA) TR1 hFE TR1 VCEO (V) TR1 IC (mA) P (mW) JEDEC package AEC compatible
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-T150-Part Number-RT3C66M-T150

RT3C66M-T150

Available upon quote

INC6006A×2

SC-88

72~330

160

100

72~330

160

100

200

○

NPN+NPN

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About Company Handling This Product

Isahaya Electronics Co., Ltd.

Response Rate

100.0%

Response Time

1.2hrs

Company Review

5.0
  • Japan

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