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  4. Silicon NPN epitaxial dual transistor for differential amplification RT3C66M (Isahaya Electronics Co., Ltd.)
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-RT3C66M
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-Isahaya Electronics Co., Ltd.

Silicon NPN epitaxial dual transistor for differential amplification RT3C66M
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Company Review

5.0

Very Fast Response

About This Product

RT3C66M is a silicon NPN epitaxial dual transistor with good pair characteristics and is designed for differential amplification.

■Features

・High withstand voltage VCEO=160V ・Good pair characteristics hFE1/hFE2=1.0 standard｜VBE1-VBE2｜=0mV standard ・High DC current amplification factor

■Applications

For differential voltage amplification

  • Product

    Silicon NPN epitaxial dual transistor for differential amplification RT3C66M

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1 Models of Silicon NPN epitaxial dual transistor for differential amplification RT3C66M

Image Part Number Price (excluding tax) Remarks Isahaya package TR2 hFE TR2 VCEO (V) TR2 IC (mA) TR1 hFE TR1 VCEO (V) TR1 IC (mA) P (mW) AEC compatible
Silicon NPN epitaxial dual transistor for differential amplification RT3C66M-Part Number-RT3C66M

RT3C66M

Available upon quote

INC6006A×2

SC-88

72 ~ 330

160

100

72 ~ 330

160

100

200

NPN+NPN

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About Company Handling This Product

Isahaya Electronics Co., Ltd.

Response Rate

100.0%

Response Time

1.2hrs

Company Review

5.0
  • Japan

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