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  4. Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M (Isahaya Electronics Co., Ltd.)
Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M-RT3A66M
Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M-Isahaya Electronics Co., Ltd.

Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Company Review

5.0

Very Fast Response

About This Product

RT3A66M is a silicon PNP epitaxial dual transistor with good pair characteristics and is designed for differential amplification.

■Features

・High voltage resistance VCEO=-150V ・Good pair characteristics hFE1/hFE2=1.0 standard｜VBE1-VBE2｜=0mV standard ・High DC current amplification factor

■Applications

For differential voltage amplification

  • Product

    Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M

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1 Models of Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M

Image Part Number Price (excluding tax) Remarks Isahaya package TR2 hFE TR2 VCEO (V) TR2 IC (mA) TR1 hFE TR1 VCEO (V) TR1 IC (mA) P (mW) AEC compatible
Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M-Part Number-RT3A66M

RT3A66M

Available upon quote

INA6006A×2

SC-88

90~270

-150

-100

90~270

-150

-100

200

PNP+PNP

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About Company Handling This Product

Isahaya Electronics Co., Ltd.

Response Rate

100.0%

Response Time

1.2hrs

Company Review

5.0
  • Japan

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