Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M
Isahaya Electronics Co., Ltd.
About This Product
RT3A66M is a silicon PNP epitaxial dual transistor with good pair characteristics and is designed for differential amplification.
■Features
・High voltage resistance VCEO=-150V
・Good pair characteristics hFE1/hFE2=1.0 standard｜VBE1-VBE2｜=0mV standard
・High DC current amplification factor
■Applications
For differential voltage amplification
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Product
Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of Silicon PNP epitaxial dual transistor for low noise differential amplification RT3A66M
| Product Image | Part Number | Price (excluding tax) | AEC compatible | Isahaya package | P (mW) | Remarks | TR1 IC (mA) | TR1 VCEO (V) | TR1 hFE | TR2 IC (mA) | TR2 VCEO (V) | TR2 hFE |
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RT3A66M |
Available upon quote | PNP+PNP | SC-88 | 200 | INA6006A×2 | -100 | -150 | 90~270 | -100 | -150 | 90~270 |
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