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MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1-INJ0203AC1
MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1-Isahaya Electronics Co., Ltd.

MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

INJ0203AC1 is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.

■Features

・Because the input impedance is high, there is no need to consider drive current. ・Drain current is large. ID=-2A ・Drive voltage -2.5V ・RDS (on) is low. RDS (on) =100mΩ typical. ・Switching speed is fast. - Ultra-compact size allows for smaller sets and high-density mounting.

■Applications

High-speed switching, analog switching, etc.

  • Product

    MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1

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1 Models of MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1

Image Part Number Price (excluding tax) Drive voltage (V) Polarity Isahaya package Tons (ns) Toff (ns) VGSS (V) VDSS (V) Ron (Ω) P (mW) JEITA package ID (A) Coss (pF) Ciss (pF)
MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1-Part Number-INJ0203AC1

INJ0203AC1

Available upon quote

-2.5

Pch

Mini type

230

940

±10

-20

0.1

200

SC-59

-2

90

340

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
  • Japan

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