MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1
Isahaya Electronics Co., Ltd.
About This Product
INJ0203AC1 is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.
■Features
・Because the input impedance is high, there is no need to consider drive current.
・Drain current is large. ID=-2A
・Drive voltage -2.5V
・RDS (on) is low. RDS (on) =100mΩ typical.
・Switching speed is fast.
- Ultra-compact size allows for smaller sets and high-density mounting.
■Applications
High-speed switching, analog switching, etc.
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Product
MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0203AC1
| Product Image | Part Number | Price (excluding tax) | Ciss (pF) | Coss (pF) | Drive voltage (V) | ID (A) | Isahaya package | JEITA package | P (mW) | Polarity | Ron (Ω) | Toff (ns) | Tons (ns) | VDSS (V) | VGSS (V) |
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INJ0203AC1 |
Available upon quote | 340 | 90 | -2.5 | -2 | Mini type | SC-59 | 200 | Pch | 0.1 | 940 | 230 | -20 | ±10 |
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