MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0103AM1
Isahaya Electronics Co., Ltd.
About This Product
INJ0103AM1 is an ultra-small resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.
■Features
- High input impedance, no need to consider drive current.
・Drive voltage -1.8V
・RDS (ON) is low.
RDS (ON) =0.67ΩTYP) @ID =-400mA,VGs =-4.5V
RDS (ON) =1.1 (TYP) @ID =-300mA,VGS =-2.5V
RDS (ON) =1.6ΩTYP) @ID =-10mA,VGs =-1.8V
- Fast switching speed.
- Ultra-compact size allows for smaller sets and high-density mounting.
■Applications
High-speed switching, analog switching, etc.
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Product
MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0103AM1
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0103AM1
| Product Image | Part Number | Price (excluding tax) | Ciss (pF) | Coss (pF) | Drive voltage (V) | ID (A) | Isahaya package | JEITA package | P (mW) | Polarity | Ron (Ω) | Toff (ns) | Tons (ns) | VDSS (V) | VGSS (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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INJ0103AM1 |
Available upon quote | 57 | 20 | -1.8 | -0.55 | Super mini type | SC-70 | 200 | Pch | 0.67 | 140 | 42 | -20 | ±8 |
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