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MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1-INJ0103AC1
MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1-Isahaya Electronics Co., Ltd.

MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

INJ0103AC1 is an ultra-small resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.

■Features

- High input impedance, no need to consider drive current. ・Drive voltage -1.8V ・RDS (ON) is low. RDS (ON) =0.67ΩTYP) @ID =-400mA,VGs =-4.5V RDS (ON) =1.1 ΩTYP) @ID =-300mA,VGs =-2.5V RDS (ON) =1.6ΩTYP) @ID =-10mA,VGs =-1.8V - Fast switching speed. - Ultra-compact size allows for smaller sets and high-density mounting.

■Applications

High-speed switching, analog switching, etc.

  • Product

    MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1

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1 Models of MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1

Image Part Number Price (excluding tax) Drive voltage (V) Polarity Isahaya package Tons (ns) Toff (ns) VGSS (V) VDSS (V) Ron (Ω) P (mW) JEITA package ID (A) Coss (pF) Ciss (pF)
MOS type field effect transistor For high speed switching Silicon P channel MOS type INJ0103AC1-Part Number-INJ0103AC1

INJ0103AC1

Available upon quote

-1.8

Pch

Mini type

42

140

±8

-20

0.67

200

SC-59

-0.55

20

57

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
  • Japan

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