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MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1-INJ0043AM1
MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1-Isahaya Electronics Co., Ltd.

MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

INJ0043AM1 is an ultra-small resin-encapsulated silicon P-channel MOS transistor. The drive voltage is designed to be low, making it ideal for low voltage applications such as portable devices and mobile devices.

■Features

・Because the input impedance is high, there is no need to consider drive current. ・Ultra low driving voltage -1.2V RDS (ON) =0.7Ω (TYP) @ID=-100mA,VGS=-4.5V RDS (ON) =1.2Ω (TYP) @ID=-50mA,VGS=-2.5V RDS (ON) =5.0Ω (TYP) @ID=-1mA,VGS=-1.2V - Fast switching speed. - Ultra-compact size allows for smaller sets and high-density mounting.

■Applications

High-speed switching, analog switching, etc.

  • Product

    MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1

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1 Models of MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1

Image Part Number Price (excluding tax) Drive voltage (V) Polarity Isahaya package Tons (ns) Toff (ns) VGSS (V) VDSS (V) Ron (Ω) P (mW) JEITA package ID (A) Coss (pF) Ciss (pF)
MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1-Part Number-INJ0043AM1

INJ0043AM1

Available upon quote

-1.2

Pch

Super mini type

42

140

±8

-20

5

200

SC-70

-0.4

20

57

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
  • Japan

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