MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1
Isahaya Electronics Co., Ltd.
About This Product
INJ0043AM1 is an ultra-small resin-encapsulated silicon P-channel MOS transistor. The drive voltage is designed to be low, making it ideal for low voltage applications such as portable devices and mobile devices.
■Features
・Because the input impedance is high, there is no need to consider drive current.
・Ultra low driving voltage -1.2V
RDS (ON) =0.7Ω (TYP) @ID=-100mA,VGS=-4.5V
RDS (ON) =1.2Ω (TYP) @ID=-50mA,VGS=-2.5V
RDS (ON) =5.0Ω (TYP) @ID=-1mA,VGS=-1.2V
- Fast switching speed.
- Ultra-compact size allows for smaller sets and high-density mounting.
■Applications
High-speed switching, analog switching, etc.
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Product
MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of MOS type field effect transistor For ultra-low voltage drive Silicon P channel MOS type INJ0043AM1
| Product Image | Part Number | Price (excluding tax) | Ciss (pF) | Coss (pF) | Drive voltage (V) | ID (A) | Isahaya package | JEITA package | P (mW) | Polarity | Ron (Ω) | Toff (ns) | Tons (ns) | VDSS (V) | VGSS (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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INJ0043AM1 |
Available upon quote | 57 | 20 | -1.2 | -0.4 | Super mini type | SC-70 | 200 | Pch | 5 | 140 | 42 | -20 | ±8 |
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