MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0011AM1-TH50
Isahaya Electronics Co., Ltd.
About This Product
INJ0011AM1 is an ultra-small external resin-encapsulated silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.
■Features
・Because the input impedance is high, there is no need to consider drive current.
・Drive voltage -4V
・RDS (ON) is low.
RDS (ON) =7.0Ω (TYP) @ID=-100mA,VGS=-4.0V
RDS (ON) =4.8Ω (TYP) @ID=-100mA,VGS=-10V
- Fast switching speed.
- Ultra-compact size allows for smaller sets and high-density mounting.
■Applications
High-speed switching, analog switching, etc.
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Product
MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0011AM1-TH50
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of MOS type field effect transistor for high speed switching Silicon P channel MOS type INJ0011AM1-TH50
| Product Image | Part Number | Price (excluding tax) | AEC compatible | Ciss (pF) | Coss (pF) | Drive voltage (V) | ID (A) | Isahaya package | JEITA package | P (mW) | Polarity | Ron (Ω) | Toff (ns) | Tons (ns) | VDSS (V) | VGSS (V) |
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INJ0011AM1-TH50 |
Available upon quote | ○ | Twenty five | 6 | -4 | -0.1 | Super mini type | SC-70 | 200 | Pch | 7 | 90 | 35 | -50 | ±20 |
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