MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0003AX series
Isahaya Electronics Co., Ltd.
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About This Product
INJ0003AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.
■Features
・Because the input impedance is high, there is no need to consider drive current.
・Drive voltage -2.5V
・RDS (ON) is low. RDS (ON) =2Ω (TYP) @ID=-100mA,VGS=-4.0V
- Fast switching speed.
・Ultra-compact size enables miniaturization of sets and high-density mounting.
■Applications
High-speed switching, analog switching, etc.
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Product
MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0003AX series
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0003AX series
| Product Image | Part Number | Price (excluding tax) | Ciss (pF) | Coss (pF) | Drive voltage (V) | ID (A) | Isahaya package | JEITA package | P (mW) | Polarity | Ron (Ω) | Toff (ns) | Tons (ns) | VDSS (V) | VGSS (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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INJ0003AC1 |
Available upon quote | 37 | 12 | -2.5 | -0.2 | Mini type | SC-59 | 200 | Pch | 2 | 110 | 16 | -20 | ±8 |
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