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MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series-INJ0001AC1
MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series-Isahaya Electronics Co., Ltd.

MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series
Isahaya Electronics Co., Ltd.

Isahaya Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.2hours

Very Fast Response


About This Product

INJ0001AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it ideal for low voltage applications such as portable equipment.

■Features

・Because the input impedance is high, there is no need to consider drive current. ・Drive voltage -2.5V. ・RDS (ON) is low. RDS (ON) =7Ω (TYP) @ID =-100mA,VGS =-4.0V - Fast switching speed. - Ultra-compact size allows for smaller sets and high-density mounting.

■Applications

High-speed switching, analog switching, etc.

  • Product

    MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series

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1 Models of MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series

Image Part Number Price (excluding tax) Drive voltage (V) Polarity Isahaya package Tons (ns) Toff (ns) VGSS (V) VDSS (V) Ron (Ω) P (mW) JEITA package ID (A) Coss (pF) Ciss (pF)
MOS type field effect transistor for high speed switching silicon P channel MOS type INJ0001AX series-Part Number-INJ0001AC1

INJ0001AC1

Available upon quote

-2.5

Pch

Mini type

13

135

±8

-50

7

200

SC-59

-0.1

5.2

28

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.2hrs


Company Review

5.0
  • Japan

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