Bipolar transistor for low frequency power amplification Silicon PNP epitaxial type 2SA1364
Isahaya Electronics Co., Ltd.
About This Product
2SA1364 is a resin-encapsulated silicon PNP epitaxial transistor. It is designed and manufactured to have high breakdown voltage, large collector current, and large collector loss, so it can be used as a general-purpose transistor for relay drives, power supplies, etc.
Additionally, the collector fins are exposed outside and can be soldered directly to the board, improving collector power dissipation. Combimentary with 2SC3444.
■Features
・Small size allows for smaller sets and high-density mounting
・High withstand voltage VCEO =- 60V
・Collector current is large Ic =- 1A
・VCE (sat) is low VCE (sat) =- 0.11V standard (@Ic =- 500mA/lB =- 25mA)
・High collector loss Pc=500mW
■Applications
Relay drives and power supplies for audio equipment, VTRs, electrical equipment, and other electronic equipment
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Product
Bipolar transistor for low frequency power amplification Silicon PNP epitaxial type 2SA1364
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Handling Company
Isahaya Electronics Co., Ltd.
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Categories
1 Models of Bipolar transistor for low frequency power amplification Silicon PNP epitaxial type 2SA1364
| Product Image | Part Number | Price (excluding tax) | HFE | IC (A) | JEDEC package | JEITA package | P (mW) | Polarity | Remarks | VCEO (V) |
|---|---|---|---|---|---|---|---|---|---|---|
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2SA1364 |
Available upon quote | 55~300 | -1 | SOT-89 | SC-62 | 500 | PNP | Complementary (2SC3444) | -60 |
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