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  4. LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm (Autex Co., Ltd.)
LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm-FAR UVC LED 235nm
LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm-Autex Co., Ltd.

LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm
Autex Co., Ltd.

Autex Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

116.3hours

About This Product

■UV-C LED light source (235nm, 255nm) with excellent stability and performance using patented SPSL technology

Silanna UV's UVC LEDs are suitable for applications such as disinfection, water quality monitoring, gas sensing, liquid chromatography, and chemical and biological analysis. Conventional AlGaN-based far-UV LEDs suffer from insufficient carrier injection, low light emission, and high driving voltage due to their high Al content. Silanna's UV-C LEDs are manufactured using a new patented SPSL technology (Short Period SuperLattice), which maintains the TE advantage of light emission and lowers the activation energy of the donor, making it more efficient than traditional AlGaN technology. More efficient compared to made LED. Furthermore, the emission wavelength can be easily controlled using the thickness of GaN. Features

■SPSL (Short Period Super Lattice) What is short period super lattice technology?

Currently, most UVC LED manufacturers adjust the wavelength by the amount of AlGaN doping, but SilannaUV uses a superlattice structure with an AlN barrier layer and a GaN well layer, each layer containing molecules or atoms at the angstrom level. We have the technology to manufacture by layering. By adjusting the thickness, properties such as bandgap and conductivity can be adjusted simply by adjusting the thickness of the calibration layer, so the new UV-C has much better properties than traditional AlGaN and is very easy to tune. We have LED manufacturing technology.

■SPSL digital alloy technology that keeps competitors at bay

Conventional AlGaN materials tend to separate, and wavelength tuning requires adjusting the ratio of Al, Ga, and N content, which can be difficult to control. On the other hand, SPSL digital manufacturing technology at the angstrom level is difficult to separate, and the wavelength can be adjusted simply by adjusting the deposition time (number of cycles).

■UVLED with quantum well structure that can maintain high output even under FAR UV

Conventional AlGaN technology has difficulty in vertical light extraction at short wavelengths due to the vertical (TE) to lateral (TM) emission transition in AlGaN due to the high Al content. These traditional structures emit very little light in the vertical direction.

  • Product

    LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm

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1 Models of LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm

Image Part Number Price (excluding tax) Viewing angle Standard voltage Standard wattage Radiated power Package type
LED Silanna Far UV/Deep UV LED FAR UVC LED 235nm-Part Number-FAR UVC LED 235nm

FAR UVC LED 235nm

Available upon quote

120°

5.8V

0.12W

0.45mW @20mA

FLAT LENS

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About Company Handling This Product

Autex Co., Ltd.

Response Rate

100.0%

Response Time

116.3hrs

  • Japan

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