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  4. Single wafer automatic cleaning equipment for SiC wafers (PHT Co., Ltd.)
Single wafer automatic cleaning equipment for SiC wafers-Single wafer automatic cleaning equipment for SiC wafers
Single wafer automatic cleaning equipment for SiC wafers-PHT Co., Ltd.

Single wafer automatic cleaning equipment for SiC wafers
PHT Co., Ltd.

About This Product

■Device development background

The most commonly used substrate for semiconductors is a Si substrate (silicon wafer). In recent years, SiC substrates (silicon carbide wafers) have been in the spotlight as substrates for power semiconductors. Substrate cleaning means can be broadly classified into two types: chemical cleaning and physical cleaning. (Chemical cleaning: A method of cleaning the substrate surface by chemical etching, etc.; Physical cleaning: A method of removing particles, etc. from the substrate surface using physical impact such as ultrasonic waves or high-pressure water.) Si substrates are mainly cleaned using chemical cleaning such as RCA cleaning. In some cleaning methods, the cleaning effect is improved by adding ultrasonic waves and combining chemical cleaning and physical cleaning. SiC substrates are chemically stable substrates. Therefore, it is difficult to achieve a cleaning effect using the same method as for Si substrates. However, by forming an oxide film on the Si surface, chemical cleaning becomes possible and it is thought that the cleaning effect can be improved.

■Basic method for cleaning SiC wafers

A SiO2 film is forcibly formed on the Si surface using O3 water. Remove the SiO2 film with HF.

■Summary

This equipment is a SiC wafer single-wafer cleaning equipment that is compatible with φ150mm (6") and φ200mm (8"). The worker sets the wafers in a 25-wafer cassette on the LD side. After cleaning, the wafers are stored in a clean cassette set on the ULD side.

■Process

LD (in water) → double-sided brush scrub → forcibly forms a SiO2 film using O3 water, then removes the SiO2 film with HF and rinses → ultrasonic shower cleaning → spin drying → ULD (in air).

■[Processed material]

1. SiC wafer φ150mm/φ200mm notch/orientation flat Diameter: φ150mm±0.2mm・φ200mm±0.2mm Thickness: 385-600μm 　 Warpage: 40μm or less 　 Contactable range: 2mm from the edge and outer circumference 2. Cassette LD side cassette: SEMI standard product → PFA Cakia (25 pieces) ULD side cassette: SEMI standard product → PP Cakia (25 pieces) 　 φ150mm (6") Wafer storage pitch: 4.7625mm 　 φ200mm (8") Wafer storage pitch: 6.35mm

■Throughput

Takt time: 60 seconds/1 piece [φ150mm (6")] Takt time: 45 seconds/1 piece [φ200mm (8")]

  • Product

    Single wafer automatic cleaning equipment for SiC wafers

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1 Models of Single wafer automatic cleaning equipment for SiC wafers

Image Part Number Price (excluding tax) Compatible sizes
Single wafer automatic cleaning equipment for SiC wafers-Part Number-Single wafer automatic cleaning equipment for SiC wafers

Single wafer automatic cleaning equipment for SiC wafers

Available upon quote

6 inches, 8 inches

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About Company Handling This Product

PHT Co., Ltd.

  • Japan

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