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RF plasma source ERFS-501-ERFS-501
RF plasma source ERFS-501-Arios Co., Ltd.

RF plasma source ERFS-501
Arios Co., Ltd.

Arios Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

1.7hours

Very Fast Response


About This Product

■Summary

This plasma source uses ICP type RF high-density plasma to process various raw material gases and can be used for film formation experiments, etching experiments, etc. The plasma chamber is made of quartz, and electrodeless discharge enables processes with less metal contamination. It can operate stably for a long time even when active gas is introduced, and can obtain clean atoms, radical beams, etc.

■Features

・High-precision plasma emission spectroscopy is possible with the viewing port. - Automatic matching mechanism allows for easy operation and stable operation for long periods of time. ・Since it is air-cooled and does not require cooling water, it can be easily installed into existing equipment. ・We have confirmed the spectral data of nitrogen radical atoms, and it can be used as a nitrogen radical source.

■Standard configuration

・RF radical source main body (ERFS-501) with automatic matching box and manual controller 1 unit ・RF power supply (RP-502) 1 unit ・1 set of cables

  • Product

    RF plasma source ERFS-501

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1 Models of RF plasma source ERFS-501

Image Part Number Price (excluding tax) Mass Maximum exit aperture Matching box Discharge chamber material Connection flange Cooling method Baking temperature Plasma excitation method Gas introduction system RF output
RF plasma source ERFS-501-Part Number-ERFS-501

ERFS-501

Available upon quote

Approximately 9.5kg

Φ28mm

Automatic matching box (manual controller attached)

Made of transparent quartz

VG80 or CF114

Forced air cooling

Maximum 150℃ (excluding cable and matching box)

Inductive Coupling (ICP)

1/4 VCRTM male

0~500W 13.56MHz ± 1kHz

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About Company Handling This Product

Response Rate

100.0%


Response Time

1.7hrs

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